N-Channel MOSFET, 18 A, 40 V, 8-Pin SOIC Infineon IRF7842PBF
- RS Stock No.:
- 688-6879
- Mfr. Part No.:
- IRF7842PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 688-6879
- Mfr. Part No.:
- IRF7842PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.25V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 33 nC @ 4.5 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.25V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 33 nC @ 4.5 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7842TRPBF
This MOSFET delivers high performance in various electronic applications. With specifications including an 18A continuous drain current and a maximum drain-source voltage of 40V, it enhances power efficiency for electronic devices. Designed for surface mount technology, this device ensures durability and is suitable for professionals in electronics and automation.
Features & Benefits
• Low Rds(on) at 4.5V improves efficiency
• High current handling optimises power delivery
• Minimal gate charge reduces switching losses
• Avalanche rated to enhance reliability
• N-channel configuration supports effective performance in control applications
Applications
• Used in synchronous MOSFET circuits for notebook processor power
• Acts as secondary synchronous rectification in isolated DC-DC converters
• Functions in non-isolated DC-DC converter designs
What is the maximum operating temperature for this device?
It operates efficiently up to +150°C, ensuring reliability in high-temperature environments.
How does this component handle current during operation?
The device supports a continuous drain current of 18A, suitable for various applications.
Can it be used in high-voltage circuits?
Yes, the maximum drain-source voltage is rated at 40V, providing flexibility for high-voltage applications.
What are the thermal resistance characteristics?
The thermal resistance from junction-to-ambient is typically around 50-55°C/W, facilitating effective heat dissipation.
Is this MOSFET compatible with surface mount technology?
Yes, it is available in a SOIC package specifically designed for surface mounting, enhancing ease of integration in circuit designs.