Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRF540ZPBF
- RS Stock No.:
- 688-6872
- Mfr. Part No.:
- IRF540ZPBF
- Brand:
- Infineon
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£1.74
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£2.08
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £0.87 | £1.74 |
| 20 - 98 | £0.795 | £1.59 |
| 100 - 198 | £0.73 | £1.46 |
| 200 - 498 | £0.68 | £1.36 |
| 500 + | £0.635 | £1.27 |
*price indicative
- RS Stock No.:
- 688-6872
- Mfr. Part No.:
- IRF540ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 27 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 92 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
| Forward Diode Voltage | 1.3V | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 27 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 92 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Width 4.69mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540ZPBF
This MOSFET is designed to deliver high performance in various electronic applications. Capable of handling a maximum continuous drain current of 36A and a drain-source voltage of 100V, its TO-220AB package ensures effective heat dissipation and stability. With maximum power dissipation rated at 92W, this N-channel device is particularly suited for demanding tasks in electrical and mechanical industries.
Features & Benefits
• Utilises HEXFET technology for enhanced efficiency
• Low Rds(on) of 26.5mΩ minimises power loss
• Fast switching speeds improve operational efficiency
• Supports enhancement mode for reliable performance
• Designed to handle repetitive avalanche conditions
• Low Rds(on) of 26.5mΩ minimises power loss
• Fast switching speeds improve operational efficiency
• Supports enhancement mode for reliable performance
• Designed to handle repetitive avalanche conditions
Applications
• Used for motor control and power management
• Ideal for switching power supplies and converters
• Suitable for automotive requiring high efficiency
• Implemented in industrial automation systems
• Effective in electronic devices needing robust performance
• Ideal for switching power supplies and converters
• Suitable for automotive requiring high efficiency
• Implemented in industrial automation systems
• Effective in electronic devices needing robust performance
What is the significance of the low Rds(on) rating in its performance?
The low Rds(on) rating reduces conduction losses, leading to higher efficiency during operation. It allows for improved thermal performance, which is critical in high-current applications.
How does the maximum drain-source voltage affect operational reliability?
The 100V drain-source voltage rating provides a substantial safety margin for applications, ensuring reliable operation under varying voltage conditions, thus preventing breakdown.
Can this MOSFET handle high-temperature environments?
With a maximum operating temperature of 175°C, it is designed to operate reliably in high-temperature conditions, making it suitable for challenging environments found in automotive and industrial applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
