Infineon HEXFET N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-220AB IRF1404ZPBF
- RS Stock No.:
- 688-6813P
- Mfr. Part No.:
- IRF1404ZPBF
- Brand:
- Infineon
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In Stock
- 48 unit(s) ready to ship
- Plus 999,999,950 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 20 - 48 | £0.795 |
| 50 - 98 | £0.75 |
| 100 - 198 | £0.70 |
| 200 + | £0.645 |
*price indicative
- RS Stock No.:
- 688-6813P
- Mfr. Part No.:
- IRF1404ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 100 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Forward Diode Voltage | 1.3V | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 100 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 4.69mm | ||
Length 10.54mm | ||
Forward Diode Voltage 1.3V | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF1404ZPBF
This MOSFET is a high-performance power component designed for a variety of applications in the automotive and industrial sectors. With a robust continuous drain current of 180A and a maximum drain-source voltage of 40V, it excels in demanding environments. The TO-220AB package type facilitates easy mounting, ensuring efficient integration into electronic circuits and systems.
Features & Benefits
• Utilises HEXFET technology for enhanced efficiency
• Designed for enhancement mode to optimise switching
• Provides fast switching speed to boost overall efficiency
• Capable of repetitive avalanche to enhance reliability
• Designed for enhancement mode to optimise switching
• Provides fast switching speed to boost overall efficiency
• Capable of repetitive avalanche to enhance reliability
Applications
• Ideal for use in motor control circuits
• Utilised in power supplies and converters
• Designed for use in automotive
• Suited for various industrial automation systems
• Effective in power management and switching
• Utilised in power supplies and converters
• Designed for use in automotive
• Suited for various industrial automation systems
• Effective in power management and switching
How does the low on-resistance benefit my applications?
The low on-resistance of 2.7mΩ reduces conduction losses, improving overall efficiency in power conversion and energy management systems.
What happens if the device exceeds its maximum operating temperature?
Exceeding the maximum operating temperature of +175°C can lead to performance degradation and potential failure, emphasising the need for adequate thermal management.
Can this be used in parallel configurations?
Yes, when used in parallel configurations, it is crucial to balance current sharing between devices to avoid overheating and maximise performance.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
