STMicroelectronics STripFET II N-Channel MOSFET, 35 A, 100 V, 3-Pin D2PAK STB30NF10T4
- RS Stock No.:
- 687-5194P
- Mfr. Part No.:
- STB30NF10T4
- Brand:
- STMicroelectronics
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Subtotal 10 units (supplied on a continuous strip)*
£13.42
(exc. VAT)
£16.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,000 unit(s) shipping from 17 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £1.342 |
*price indicative
- RS Stock No.:
- 687-5194P
- Mfr. Part No.:
- STB30NF10T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | STripFET II | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 115 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 9.35mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.6mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 100 V | ||
Series STripFET II | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 115 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 9.35mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.6mm | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics