N-Channel MOSFET, 9.5 A, 200 V, 3-Pin TO-220AB onsemi FQP10N20C
- RS Stock No.:
- 671-4998
- Mfr. Part No.:
- FQP10N20C
- Brand:
- ON Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 671-4998
- Mfr. Part No.:
- FQP10N20C
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.5 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 360 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 72 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.7mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.1mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Transistor Material | Si | |
| Series | QFET | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.5 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 72 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.1mm | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Transistor Material Si | ||
Series QFET | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||