onsemi UniFET N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A
- RS Stock No.:
- 671-4862
- Mfr. Part No.:
- FDP75N08A
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.41
(exc. VAT)
£12.49
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 5 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.082 | £10.41 |
| 50 - 95 | £1.736 | £8.68 |
| 100 + | £1.382 | £6.91 |
*price indicative
- RS Stock No.:
- 671-4862
- Mfr. Part No.:
- FDP75N08A
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | TO-220AB | |
| Series | UniFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 137 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220AB | ||
Series UniFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 137 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 80 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.