onsemi PowerTrench N-Channel MOSFET, 5 A, 150 V, 3-Pin TO-220AB FDP42AN15A0
- RS Stock No.:
- 671-4840P
- Mfr. Part No.:
- FDP42AN15A0
- Brand:
- onsemi
Subtotal 5 units (supplied in a tube)*
£11.74
(exc. VAT)
£14.09
(inc. VAT)
FREE delivery for orders over £50.00
- 110 unit(s) ready to ship
Units | Per unit |
---|---|
5 + | £2.348 |
*price indicative
- RS Stock No.:
- 671-4840P
- Mfr. Part No.:
- FDP42AN15A0
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 5 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | TO-220AB | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 42 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.