onsemi PowerTrench N-Channel MOSFET, 5 A, 150 V, 3-Pin TO-220AB FDP42AN15A0
- RS Stock No.:
- 671-4840
- Mfr. Part No.:
- FDP42AN15A0
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£11.74
(exc. VAT)
£14.09
(inc. VAT)
FREE delivery for orders over £50.00
- 15 unit(s) ready to ship
- Plus 110 unit(s) shipping from 20 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 + | £2.348 | £11.74 |
*price indicative
- RS Stock No.:
- 671-4840
- Mfr. Part No.:
- FDP42AN15A0
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 5 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | TO-220AB | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 42 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
Transistor Material | Si | |
Width | 4.83mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Minimum Operating Temperature | -55 °C | |
Height | 9.4mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.