onsemi PowerTrench N-Channel MOSFET, 5.9 A, 105 V, 3-Pin TO-220AB FDP3672
- RS Stock No.:
- 671-4834
- Mfr. Part No.:
- FDP3672
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£8.08
(exc. VAT)
£9.695
(inc. VAT)
FREE delivery for orders over £50.00
- 810 left, ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £1.616 | £8.08 |
*price indicative
- RS Stock No.:
- 671-4834
- Mfr. Part No.:
- FDP3672
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 5.9 A | |
Maximum Drain Source Voltage | 105 V | |
Package Type | TO-220AB | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 33 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 135 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 10.67mm | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.9 A | ||
Maximum Drain Source Voltage 105 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 135 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.67mm | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.