onsemi PowerTrench N-Channel MOSFET, 4 A, 150 V, 3-Pin TO-220AB FDP2572
- RS Stock No.:
- 671-4815
- Mfr. Part No.:
- FDP2572
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£10.61
(exc. VAT)
£12.73
(inc. VAT)
FREE delivery for orders over £50.00
- 315 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £2.122 | £10.61 |
*price indicative
- RS Stock No.:
- 671-4815
- Mfr. Part No.:
- FDP2572
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 4 A | |
Maximum Drain Source Voltage | 150 V | |
Series | PowerTrench | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 54 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 135 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.83mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 54 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 135 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.