onsemi P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK FQD8P10TM
- RS Stock No.:
- 671-1043P
- Mfr. Part No.:
- FQD8P10TM
- Brand:
- onsemi
Subtotal 50 units (supplied on a continuous strip)*
£30.60
(exc. VAT)
£36.70
(inc. VAT)
FREE delivery for orders over £50.00
- 7,200 unit(s) ready to ship
Units | Per unit |
---|---|
50 - 95 | £0.612 |
100 - 495 | £0.532 |
500 - 995 | £0.466 |
1000 + | £0.424 |
*price indicative
- RS Stock No.:
- 671-1043P
- Mfr. Part No.:
- FQD8P10TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 6.6 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 530 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Operating Temperature | +150 °C | |
Length | 6.6mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 6.1mm | |
Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
Height | 2.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.6 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 530 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.1mm | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
Automotive P-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.