onsemi P-Channel MOSFET, 22 A, 100 V, 3-Pin D2PAK FQB22P10TM
- RS Stock No.:
- 671-0879
- Mfr. Part No.:
- FQB22P10TM
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.19
(exc. VAT)
£9.83
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 30 unit(s) shipping from 20 October 2025
- Plus 2,000 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.638 | £8.19 |
| 50 - 95 | £1.412 | £7.06 |
| 100 - 495 | £1.224 | £6.12 |
| 500 + | £1.076 | £5.38 |
*price indicative
- RS Stock No.:
- 671-0879
- Mfr. Part No.:
- FQB22P10TM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 3.75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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