onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949
- RS Stock No.:
- 671-0747P
- Mfr. Part No.:
- FDS8949
- Brand:
- onsemi
Subtotal 50 units (supplied on a continuous strip)*
£44.80
(exc. VAT)
£53.75
(inc. VAT)
FREE delivery for orders over £50.00
- 3,235 unit(s) ready to ship
Units | Per unit |
---|---|
50 - 95 | £0.896 |
100 - 495 | £0.778 |
500 - 995 | £0.684 |
1000 + | £0.622 |
*price indicative
- RS Stock No.:
- 671-0747P
- Mfr. Part No.:
- FDS8949
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 29 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 5mm | |
Typical Gate Charge @ Vgs | 7.7 nC @ 5 V | |
Width | 4mm | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 7.7 nC @ 5 V | ||
Width 4mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.