onsemi PowerTrench N-Channel MOSFET, 8.5 A, 30 V, 8-Pin SOIC FDS8884
- RS Stock No.:
- 671-0722P
- Mfr. Part No.:
- FDS8884
- Brand:
- onsemi
Subtotal 100 units (supplied on a continuous strip)*
£30.10
(exc. VAT)
£36.10
(inc. VAT)
FREE delivery for orders over £50.00
- Final 3,910 unit(s), ready to ship
Units | Per unit |
---|---|
100 - 240 | £0.301 |
250 - 490 | £0.261 |
500 - 990 | £0.229 |
1000 + | £0.209 |
*price indicative
- RS Stock No.:
- 671-0722P
- Mfr. Part No.:
- FDS8884
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 8.5 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 23 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Length | 5mm | |
Typical Gate Charge @ Vgs | 9.2 nC @ 10 V | |
Width | 4mm | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 9.2 nC @ 10 V | ||
Width 4mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.