onsemi PowerTrench N-Channel MOSFET, 12.5 A, 30 V, 8-Pin SOIC FDS6680A
- RS Stock No.:
- 671-0605P
- Mfr. Part No.:
- FDS6680A
- Brand:
- onsemi
Subtotal 25 units (supplied on a continuous strip)*
£15.20
(exc. VAT)
£18.25
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 2,115 left, shipping from 13 October 2025
Units | Per unit |
---|---|
25 - 95 | £0.608 |
100 - 245 | £0.402 |
250 - 495 | £0.378 |
500 + | £0.362 |
*price indicative
- RS Stock No.:
- 671-0605P
- Mfr. Part No.:
- FDS6680A
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 12.5 A | |
Maximum Drain Source Voltage | 30 V | |
Series | PowerTrench | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 10 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 4mm | |
Length | 5mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 16 nC @ 5 V | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4mm | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 16 nC @ 5 V | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.