onsemi P-Channel MOSFET, 13.5 A, 20 V, 8-Pin SOIC FDS4465
- RS Stock No.:
- 671-0517
- Mfr. Part No.:
- FDS4465
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.84
(exc. VAT)
£8.21
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 5,830 unit(s) shipping from 20 October 2025
- Plus 999,994,165 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.368 | £6.84 |
| 50 - 95 | £1.18 | £5.90 |
| 100 - 495 | £1.022 | £5.11 |
| 500 - 995 | £0.898 | £4.49 |
| 1000 + | £0.818 | £4.09 |
*price indicative
- RS Stock No.:
- 671-0517
- Mfr. Part No.:
- FDS4465
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 13.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 86 nC @ 4.5 V | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 13.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 86 nC @ 4.5 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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