onsemi P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC FDS4435BZ
- RS Stock No.:
- 671-0508P
- Mfr. Part No.:
- FDS4435BZ
- Brand:
- onsemi
Subtotal 50 units (supplied on a continuous strip)*
£18.80
(exc. VAT)
£22.55
(inc. VAT)
FREE delivery for orders over £50.00
- 15,250 left, ready to ship
Units | Per unit |
---|---|
50 - 95 | £0.376 |
100 - 495 | £0.326 |
500 - 995 | £0.286 |
1000 + | £0.26 |
*price indicative
- RS Stock No.:
- 671-0508P
- Mfr. Part No.:
- FDS4435BZ
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 8.8 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 20 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 29 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Width | 4mm | |
Length | 5mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.8 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 29 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.