onsemi P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC FDS4435BZ
- RS Stock No.:
- 671-0508P
- Mfr. Part No.:
- FDS4435BZ
- Brand:
- onsemi
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£18.80
(exc. VAT)
£22.55
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 15,800 left, ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 95 | £0.376 |
| 100 - 495 | £0.326 |
| 500 - 995 | £0.286 |
| 1000 + | £0.26 |
*price indicative
- RS Stock No.:
- 671-0508P
- Mfr. Part No.:
- FDS4435BZ
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8.8 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 29 nC @ 10 V | |
| Length | 5mm | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.8 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 29 nC @ 10 V | ||
Length 5mm | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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