Infineon HEXFET N-Channel MOSFET, 210 A, 75 V, 3-Pin TO-220AB IRFB3077PBF
- RS Stock No.:
- 650-4716P
- Mfr. Part No.:
- IRFB3077PBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 10 - 24 | £2.43 |
| 25 - 49 | £2.38 |
| 50 - 99 | £2.23 |
| 100 + | £2.07 |
*price indicative
- RS Stock No.:
- 650-4716P
- Mfr. Part No.:
- IRFB3077PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 210 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.3 m? | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 370 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 10.66mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.82mm | |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.02mm | |
| Forward Diode Voltage | 1.3V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 210 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.3 m? | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 370 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 10.66mm | ||
Maximum Operating Temperature +175 °C | ||
Width 4.82mm | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
Forward Diode Voltage 1.3V | ||
Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 75V Maximum Drain Source Voltage - IRFB3077PBF
This MOSFET is a high-performance power electronics component suitable for various demanding applications. Designed using Si MOSFET technology, it features a TO-220AB MOSFET package that enables effective thermal management. With a maximum continuous drain current of 210A and a maximum drain-source voltage of 75V, it excels in high-current applications while ensuring reliable performance under tough conditions.
Features & Benefits
• Achieves low RDS(on) of 3.3mΩ for efficient operation
• Designed for enhancement mode, supporting robust applications
• High maximum power dissipation of 370W optimises device longevity
• Improved avalanche and dynamic dV/dt ruggedness ensures safety
• Fully characterised capacitance, enhancing switching performance
• Suitable for high-speed power switching with excellent thermal stability
• Designed for enhancement mode, supporting robust applications
• High maximum power dissipation of 370W optimises device longevity
• Improved avalanche and dynamic dV/dt ruggedness ensures safety
• Fully characterised capacitance, enhancing switching performance
• Suitable for high-speed power switching with excellent thermal stability
Applications
• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supply configurations
• Effective in hard switched and high-frequency circuits
• Facilitates efficient power management in industrial automation systems
• Supports various power supply designs in electrical and mechanical
• Ideal for uninterruptible power supply configurations
• Effective in hard switched and high-frequency circuits
• Facilitates efficient power management in industrial automation systems
• Supports various power supply designs in electrical and mechanical
What operating temperature range can this component endure?
It operates reliably within a temperature range of -55°C to +175°C, making it suitable for a wide variety of environments.
How does the low RDS(on) benefit the application?
The low RDS(on) significantly reduces power loss during operation, which enhances energy efficiency and thermal performance in applications requiring high current flow.
What are the advantages of the TO-220AB package format?
This package format ensures better heat dissipation and easier installation, particularly in through-hole mounting scenarios, promoting robust circuit designs.
What type of gate threshold voltage does it require?
The component supports a gate threshold voltage ranging between 2V and 4V, allowing for compatibility with various control circuits.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
