P-Channel MOSFET, 14 A, 55 V, 3-Pin TO-220 FP Infineon IRLIB9343PBF
- RS Stock No.:
- 650-4485P
- Mfr. Part No.:
- IRLIB9343PBF
- Brand:
- Infineon
Subtotal 5 units (supplied in a tube)*
£1.96
(exc. VAT)
£2.35
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 5 + | £0.392 |
*price indicative
- RS Stock No.:
- 650-4485P
- Mfr. Part No.:
- IRLIB9343PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 105 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 33 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.63mm | |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Minimum Operating Temperature | -40 °C | |
| Height | 9.8mm | |
| Series | HEXFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 105 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 33 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.63mm | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Minimum Operating Temperature -40 °C | ||
Height 9.8mm | ||
Series HEXFET | ||