Infineon HEXFET N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB IRFB4227PBF

Save 16% when you buy 100 units

Subtotal 10 units (supplied in a tube)*

£21.70

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£26.00

(inc. VAT)

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10 - 24£2.17
25 - 49£2.12
50 - 99£1.99
100 +£1.82

*price indicative

Packaging Options:
RS Stock No.:
650-4277P
Mfr. Part No.:
IRFB4227PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

70 nC @ 10 V

Transistor Material

Si

Width

4.82mm

Length

10.66mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

9.02mm