P-Channel MOSFET, 10.5 A, 40 V, 8-Pin SOIC Infineon IRF7240PBF

RS Stock No.:: 650-3937
Mfr. Part No.:: IRF7240PBF
Brand:: Infineon

P-Channel MOSFET, 10.5 A, 40 V, 8-Pin SOIC Infineon IRF7240PBF

Currently unavailable

We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.

RS Stock No.:: 650-3937
Mfr. Part No.:: IRF7240PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	10.5 A
	Maximum Drain Source Voltage	40 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	15 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	4mm
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	73 nC @ 10 V
	Series	HEXFET
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 10.5 A
	Maximum Drain Source Voltage 40 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 15 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 4mm
	Length 5mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 73 nC @ 10 V
	Series HEXFET
	Height 1.5mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET Series MOSFET, 10.5A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF7240TRPBF

This P-Channel MOSFET excels in power management solutions. With a maximum continuous drain current of 10.5A and a drain-source voltage capability of 40V, it is designed for surface mounting in a compact SOIC package. Measuring 5mm in length, 4mm in width and 1.5mm in height, it is suitable for various electronic applications including battery management systems.

Features & Benefits

• Supports high current loads up to 10.5A, ideal for demanding tasks
• Operates effectively in enhancement mode for improved control
• Designed for thermal performance with a customised leadframe
• Suitable for multiple applications, saving on board space
• Compatible with standard soldering processes such as infrared and wave

Applications

• Utilised in battery management systems for monitoring performance
• Used in load management circuits requiring efficient power manipulation
• Suitable for automotive where space and efficiency are critical
• Integrated in power supplies for reliable load handling

What are the key thermal characteristics of this device?

The device features enhanced thermal characteristics due to its customised leadframe design, enabling it to operate comfortably within a junction temperature range of -55°C to +150°C.

How does the on-resistance impact overall performance?

With an exceptionally low Rds(on) of just 25mΩ, this MOSFET significantly reduces power losses during operation, enhancing the efficiency of power circuits and improving heat dissipation.

Can it be used in high-frequency applications?

Yes, the device's parameters, such as the typical gate charge of 73 nC at 10 V, allow for effective operation in high-frequency applications, making it suitable for various electronic devices.

What should be considered for optimal use in circuits?

It's essential to ensure that the gate-source voltage remains within the maximum limits of ±20V to prevent damage, thereby maintaining device reliability and performance in the application.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.