Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK IRF4905LPBF
- RS Stock No.:
- 650-3662P
- Mfr. Part No.:
- IRF4905LPBF
- Brand:
- Infineon
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Subtotal 25 units (supplied in a tube)*
£28.10
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£33.725
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In Stock
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Units | Per unit |
|---|---|
| 25 - 45 | £1.124 |
| 50 - 120 | £1.054 |
| 125 - 245 | £0.986 |
| 250 + | £0.904 |
*price indicative
- RS Stock No.:
- 650-3662P
- Mfr. Part No.:
- IRF4905LPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 3.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.83mm | |
| Transistor Material | Si | |
| Height | 10.54mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Transistor Material Si | ||
Height 10.54mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF
This Infineon MOSFET features a P-channel configuration and is capable of handling -70A of continuous drain current with a maximum drain-source voltage of 55V. It is designed for high-performance applications, particularly in electronic circuits that require effective power management and high efficiency. It is suitable for users in the automation and electronics sectors, offering dependable operation in various environments.
Features & Benefits
• Enhanced performance at high temperatures, up to +175°C
• Low RDS(on) for decreased power losses during operation
• Fast switching capabilities to improve efficiency
• Tolerates repetitive avalanche conditions without failure
• Effective gate charge characteristics for better circuit responsiveness
• Low RDS(on) for decreased power losses during operation
• Fast switching capabilities to improve efficiency
• Tolerates repetitive avalanche conditions without failure
• Effective gate charge characteristics for better circuit responsiveness
Applications
• Used in power management circuits for energy-efficient devices
• Ideal for brushless DC motor control
• Applicable in automotive electronics for increased reliability
• Suitable for industrial automation systems that require robust components
• Ideal for brushless DC motor control
• Applicable in automotive electronics for increased reliability
• Suitable for industrial automation systems that require robust components
What type of voltage can be handled during operation?
It can handle a maximum drain-source voltage of 55V, making it suitable for moderate to high voltage applications.
Can this device operate at elevated temperatures?
Yes, it has an operating temperature range of -55°C to +175°C, allowing it to function in extreme conditions.
How does the low RDS(on) benefit circuit design?
The low RDS(on) reduces conduction losses, resulting in enhanced efficiency and lower heat generation in power applications.
Is this component compatible with typical PCB designs?
Yes, it is designed for through-hole mounting, allowing for seamless integration into standard PCB layouts used in various electronic designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
