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    N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 Infineon IRLML2502PBF

    RS Stock No.:
    610-6693
    Mfr. Part No.:
    IRLML2502PBF
    Brand:
    Infineon
    Infineon
    View all MOSFETs
    Discontinued product
    RS Stock No.:
    610-6693
    Mfr. Part No.:
    IRLML2502PBF
    Brand:
    Infineon

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    Product Details

    N-Channel Power MOSFET 12V to 25V, Infineon


    Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current4.2 A
    Maximum Drain Source Voltage20 V
    Package TypeSOT-23
    Mounting TypeSurface Mount
    Pin Count3
    Maximum Drain Source Resistance45 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1.2V
    Minimum Gate Threshold Voltage0.6V
    Maximum Power Dissipation1.25 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-12 V, +12 V
    Transistor MaterialSi
    Width1.4mm
    Length3.04mm
    Maximum Operating Temperature+150 °C
    Number of Elements per Chip1
    Typical Gate Charge @ Vgs8 nC @ 5 V
    Height1.02mm
    Minimum Operating Temperature-55 °C
    SeriesHEXFET
    Discontinued product