Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin IPAK IRLU120NPBF

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
543-1718
Mfr. Part No.:
IRLU120NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

185 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Length

6.6mm

Number of Elements per Chip

1

Transistor Material

Si

Width

2.3mm

Typical Gate Charge @ Vgs

20 nC @ 5 V

Maximum Operating Temperature

+175 °C

Height

6.1mm

Minimum Operating Temperature

-55 °C