Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin IPAK IRLU120NPBF
- RS Stock No.:
- 543-1718
- Mfr. Part No.:
- IRLU120NPBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 543-1718
- Mfr. Part No.:
- IRLU120NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | IPAK (TO-251) | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 185 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 2.3mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 5 V | |
| Height | 6.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type IPAK (TO-251) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 185 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 2.3mm | ||
Typical Gate Charge @ Vgs 20 nC @ 5 V | ||
Height 6.1mm | ||
Minimum Operating Temperature -55 °C | ||
