Infineon HEXFET N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC IRF7452PBF

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
543-1320
Mfr. Part No.:
IRF7452PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

5mm

Number of Elements per Chip

1

Transistor Material

Si

Width

4mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Height

1.5mm

Minimum Operating Temperature

-55 °C

The Infineon IRF7452 is the 100V single N-channel HEXFET power MOSFET in a SO-8 package.

Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses