Infineon HEXFET N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF
- RS Stock No.:
- 543-1083P
- Mfr. Part No.:
- IRF1404PBF
- Brand:
- Infineon
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Subtotal 10 units (supplied in a tube)*
£9.50
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£11.40
(inc. VAT)
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- 1,000 unit(s) shipping from 30 October 2025
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Units | Per unit |
|---|---|
| 10 - 49 | £0.95 |
| 50 - 99 | £0.90 |
| 100 - 249 | £0.85 |
| 250 + | £0.82 |
*price indicative
- RS Stock No.:
- 543-1083P
- Mfr. Part No.:
- IRF1404PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 202 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 333 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 131 nC @ 10 V | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 202 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 333 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 131 nC @ 10 V | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 202A Maximum Continuous Drain Current, 333W Maximum Power Dissipation - IRF1404PBF
This power MOSFET is designed for high efficiency and dependability across various applications, making it important for professionals in automation, electronics, and electrical engineering. The advanced processing techniques used ensure minimal on-resistance and a wide operational temperature range, broadening its applicability.
Features & Benefits
• Continuous drain current of 202A supports robust performance
• Low Rds(on) of 4mΩ enhances energy efficiency
• Rapid switching capabilities improve overall performance
• Capable of operating at high temperatures, reaching up to 175°C
• Employs Si MOSFET technology for effective thermal management
• Comes in a TO-220AB package for straightforward mounting
• Low Rds(on) of 4mΩ enhances energy efficiency
• Rapid switching capabilities improve overall performance
• Capable of operating at high temperatures, reaching up to 175°C
• Employs Si MOSFET technology for effective thermal management
• Comes in a TO-220AB package for straightforward mounting
Applications
• Employed in industrial automation systems for efficient power switching
• Suitable for high current motor controls and drives
• Ideal for power supply prioritising efficiency
• Utilised in renewable energy systems for effective power management
• Suitable for high current motor controls and drives
• Ideal for power supply prioritising efficiency
• Utilised in renewable energy systems for effective power management
What type of voltage can be managed?
The device can support voltage levels up to 40V between the drain and source, offering versatility for various voltage regulation applications.
How does its low on-resistance impact system efficiency?
The low Rds(on) significantly reduces power loss during operation, leading to improved system efficiency by minimising energy waste.
What temperatures can it withstand during operation?
It is designed to function efficiently within a temperature range of -55°C to +175°C, making it appropriate for challenging environments.
Can it handle pulsed drain currents?
Yes, it can accommodate pulsed drain currents up to 808A, which provides flexibility for different application needs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
