Infineon HEXFET N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF
- RS Stock No.:
- 543-1083P
- Mfr. Part No.:
- IRF1404PBF
- Brand:
- Infineon
Subtotal 10 units (supplied in a tube)*
£9.50
(exc. VAT)
£11.40
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 14 January 2026
Units | Per unit |
|---|---|
| 10 - 49 | £0.95 |
| 50 - 99 | £0.90 |
| 100 - 249 | £0.85 |
| 250 + | £0.82 |
*price indicative
- RS Stock No.:
- 543-1083P
- Mfr. Part No.:
- IRF1404PBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 202 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 333 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 131 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
| Height | 8.77mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 202 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 333 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 131 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
Height 8.77mm | ||
N-Channel Power MOSFET 40V, Infineon
Infineon HEXFET Series MOSFET, 202A Maximum Continuous Drain Current, 333W Maximum Power Dissipation - IRF1404PBF
Features & Benefits
• Low Rds(on) of 4mΩ enhances energy efficiency
• Rapid switching capabilities improve overall performance
• Capable of operating at high temperatures, reaching up to 175°C
• Employs Si MOSFET technology for effective thermal management
• Comes in a TO-220AB package for straightforward mounting
Applications
• Suitable for high current motor controls and drives
• Ideal for power supply prioritising efficiency
• Utilised in renewable energy systems for effective power management


