Vishay N-Channel MOSFET, 17 A, 200 V, 3-Pin D2PAK IRL640SPBF
- RS Stock No.:
- 543-0456P
- Mfr. Part No.:
- IRL640SPBF
- Brand:
- Vishay
Bulk discount available
Subtotal 10 units (supplied in a bag)*
£15.80
(exc. VAT)
£19.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 49 | £1.58 |
| 50 - 99 | £1.42 |
| 100 - 249 | £1.35 |
| 250 + | £1.27 |
*price indicative
- RS Stock No.:
- 543-0456P
- Mfr. Part No.:
- IRL640SPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Typical Gate Charge @ Vgs | 66 nC @ 5 V | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 66 nC @ 5 V | ||
Transistor Material Si | ||
Length 10.67mm | ||
Maximum Operating Temperature +150 °C | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor