N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK Infineon IRL2910SPBF
- RS Stock No.:
- 543-0377
- Mfr. Part No.:
- IRL2910SPBF
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 543-0377
- Mfr. Part No.:
- IRL2910SPBF
- Brand:
- Infineon
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon 100V single N-channel IR MOSFET in a D2-Pak package. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package.
Advanced process technology
Ultra low on-resistance
Dynamic dv/dt rating
Fast switching
Fully avalanche rated
Ultra low on-resistance
Dynamic dv/dt rating
Fast switching
Fully avalanche rated
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 55 A |
Maximum Drain Source Voltage | 100 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 26 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 3.8 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Width | 9.65mm |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Length | 10.67mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 140 nC @ 5 V |
Minimum Operating Temperature | -55 °C |
Height | 4.83mm |
Series | HEXFET |