Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF
- RS Stock No.:
- 543-0068
- Mfr. Part No.:
- IRF630NPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 1 - 24 | £0.78 |
| 25 - 49 | £0.66 |
| 50 - 99 | £0.62 |
| 100 - 249 | £0.58 |
| 250 + | £0.55 |
*price indicative
- RS Stock No.:
- 543-0068
- Mfr. Part No.:
- IRF630NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.3 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 82 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.69mm | |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.3 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 82 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.69mm | ||
Typical Gate Charge @ Vgs 35 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF
This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.
Features & Benefits
• High power rating supports extensive electrical applications
• Efficient design lowers thermal resistance for effective cooling
• Fast switching speeds improve performance in dynamic systems
• Simple drive requirements aid in circuit integration
• Fully avalanche rated, making it suitable for rugged conditions
• Efficient design lowers thermal resistance for effective cooling
• Fast switching speeds improve performance in dynamic systems
• Simple drive requirements aid in circuit integration
• Fully avalanche rated, making it suitable for rugged conditions
Applications
• Utilised in industrial power supplies to maintain stable voltage regulation
• Employed in motor control systems for efficient functionality
• Ideal for DC-DC converters and power management circuits
• Used in HVAC systems to control compressor motors
• Appropriate for renewable energy systems, enhancing power efficiency
• Employed in motor control systems for efficient functionality
• Ideal for DC-DC converters and power management circuits
• Used in HVAC systems to control compressor motors
• Appropriate for renewable energy systems, enhancing power efficiency
What is the maximum gate-source voltage that can be applied?
The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.
How does the device handle thermal dissipation during operation?
It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.
Is there a specific mounting type recommended for optimal performance?
The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.
What type of applications benefit from its fast switching capabilities?
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
