Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 IRFI3205PBF
- RS Stock No.:
- 542-9608P
- Mfr. Part No.:
- IRFI3205PBF
- Brand:
- Infineon
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Subtotal 10 units (supplied in a tube)*
£20.70
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£24.80
(inc. VAT)
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Last RS stock
- Final 15 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 - 24 | £2.07 |
| 25 - 49 | £1.93 |
| 50 - 99 | £1.79 |
| 100 + | £1.68 |
*price indicative
- RS Stock No.:
- 542-9608P
- Mfr. Part No.:
- IRFI3205PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 64 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 63 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
| Length | 10.75mm | |
| Transistor Material | Si | |
| Height | 9.8mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 64 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 63 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Length 10.75mm | ||
Transistor Material Si | ||
Height 9.8mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 63W Maximum Power Dissipation - IRFI3205PBF
This MOSFET is suited for high-efficiency applications, offering a solution for various electronic and electrical systems. With advanced processing, it is effective in power management and switching tasks, serving as a key component in contemporary designs. Its enhancement mode technology ensures consistent performance across diverse operational conditions.
Features & Benefits
• Continuous drain current capability of 64A supports high-performance applications
• 55V drain-source voltage improves circuit reliability
• Low on-resistance of 8mΩ decreases power loss
• Quick switching speeds enhance efficiency in high-frequency applications
• Maximum power dissipation rated at 63W supports effective thermal management
• TO-220 package design allows straightforward installation in various setups
• 55V drain-source voltage improves circuit reliability
• Low on-resistance of 8mΩ decreases power loss
• Quick switching speeds enhance efficiency in high-frequency applications
• Maximum power dissipation rated at 63W supports effective thermal management
• TO-220 package design allows straightforward installation in various setups
Applications
• Utilised in power supplies for efficient energy conversion
• Suitable for DC-DC converters managing high currents
• Ideal for motor control requiring rapid switching
• Employed in inverter circuits within renewable energy systems
• Used in electric vehicle power management systems
• Suitable for DC-DC converters managing high currents
• Ideal for motor control requiring rapid switching
• Employed in inverter circuits within renewable energy systems
• Used in electric vehicle power management systems
How does the low on-resistance benefit performance?
The low on-resistance reduces heat loss, increasing efficiency and ensuring more energy is available for the load instead of being wasted as heat.
What is the optimal gate voltage for efficient operation?
An optimal gate voltage of 10V ensures maximum conduction, confirming reliable operation in high current applications.
Can this component handle pulsed currents?
Yes, it is rated for pulsed drain currents up to 390A, making it suitable for transient demand applications.
What temperature range can it operate within?
It functions effectively across a wide temperature range of -55°C to +175°C, accommodating various environmental conditions.
Is this product compatible with standard PCB mounting?
Yes, its TO-220 package design ensures compatibility with conventional through-hole PCB mounting practices.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
