Vishay P-Channel MOSFET, 1.8 A, 200 V, 3-Pin TO-220AB IRF9610PBF
- RS Stock No.:
- 542-9462
- Mfr. Part No.:
- IRF9610PBF
- Brand:
- Vishay
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Subtotal (1 unit)*
£1.31
(exc. VAT)
£1.57
(inc. VAT)
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In Stock
- 21 unit(s) ready to ship
- Plus 26 unit(s) ready to ship from another location
- Plus 1,003 unit(s) shipping from 23 October 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £1.31 |
| 10 - 49 | £1.17 |
| 50 - 99 | £1.11 |
| 100 - 249 | £0.98 |
| 250 + | £0.91 |
*price indicative
- RS Stock No.:
- 542-9462
- Mfr. Part No.:
- IRF9610PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Width | 4.7mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.41mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Length 10.41mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements
Ease of paralleling
Simple drive requirements
MOSFET Transistors, Vishay Semiconductor