Infineon LogicFET N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB IRL1004PBF
- RS Stock No.:
- 541-2105P
- Mfr. Part No.:
- IRL1004PBF
- Brand:
- Infineon
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In Stock
- 432 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 - 9 | £2.35 |
| 10 - 14 | £2.30 |
| 15 - 24 | £2.22 |
| 25 + | £2.19 |
*price indicative
- RS Stock No.:
- 541-2105P
- Mfr. Part No.:
- IRL1004PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-220AB | |
| Series | LogicFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 100 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.69mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220AB | ||
Series LogicFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 100 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.69mm | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon LogicFET Series MOSFET, 130A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL1004PBF
This high-performance MOSFET employs Si technology and is designed for efficient power management in a variety of electronic applications. The enhancement mode N-channel structure ensures effective operation, making it suitable for modern automation and electrical systems, particularly in high power circuits.
Features & Benefits
• Continuous drain current capacity of up to 130A
• Maximum drain-source voltage of 40V ensuring robust performance
• Low Rds(on) of 7mΩ to decrease heat generation
• High thermal stability with a maximum operating temperature of +175°C
• Compact TO-220AB package allows for versatile mounting options
• Maximum drain-source voltage of 40V ensuring robust performance
• Low Rds(on) of 7mΩ to decrease heat generation
• High thermal stability with a maximum operating temperature of +175°C
• Compact TO-220AB package allows for versatile mounting options
Applications
• High-efficiency power supply circuits
• Automotive and industrial automation systems
• Energy management and conversion systems
• Automotive and industrial automation systems
• Energy management and conversion systems
How does the Rds(on) contribute to the efficiency of the device?
A low Rds(on) of 7mΩ minimises power losses during operation, thereby reducing heat and enhancing overall efficiency in power applications.
What is the significance of the operating temperature range?
The device is capable of functioning within a wide temperature range of -55°C to +175°C, ensuring dependable performance across diverse environmental conditions and minimising the risk of thermal failure.
Can it be used for high-frequency switching applications?
Yes, it is designed for fast switching capabilities, making it suitable for high-frequency operations, thus improving performance in communication and control systems.
What considerations should be taken for installation?
Utilise appropriate thermal management techniques, such as a suitable heatsink, as high-power devices need effective heat dissipation to maintain functionality and reliability.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
