Vishay N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-247AC IRFP22N50APBF
- RS Stock No.:
- 541-1972
- Distrelec Article No.:
- 301-91-586
- Mfr. Part No.:
- IRFP22N50APBF
- Brand:
- Vishay
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Subtotal (1 unit)*
£4.46
(exc. VAT)
£5.35
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 58 unit(s) ready to ship
- Plus 2 unit(s) ready to ship from another location
- Plus 535 unit(s) shipping from 23 October 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £4.46 |
| 10 - 24 | £4.34 |
| 25 - 49 | £4.11 |
| 50 - 99 | £3.91 |
| 100 + | £3.70 |
*price indicative
- RS Stock No.:
- 541-1972
- Distrelec Article No.:
- 301-91-586
- Mfr. Part No.:
- IRFP22N50APBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 230 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 277 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.87mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 230 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 277 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Width 5.31mm | ||
Maximum Operating Temperature +150 °C | ||
Length 15.87mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
MOSFET Transistors, Vishay Semiconductor