Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF
- RS Stock No.:
- 541-1720P
- Mfr. Part No.:
- IRF5210PBF
- Brand:
- Infineon
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Subtotal 10 units (supplied in a tube)*
£16.20
(exc. VAT)
£19.40
(inc. VAT)
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In Stock
- 120 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 24 | £1.62 |
| 25 - 49 | £1.59 |
| 50 - 99 | £1.48 |
| 100 + | £1.38 |
*price indicative
- RS Stock No.:
- 541-1720P
- Mfr. Part No.:
- IRF5210PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.54mm | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.69mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.69mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
Forward Diode Voltage 1.6V | ||
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF
This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.
Features & Benefits
• 40A continuous drain current accommodates high-power applications
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance
Applications
• Power switching in industrial automation
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics
What is the maximum operating temperature for this component?
The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.
How does the low on-resistance benefit circuit performance?
The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.
Is this suitable for applications in automotive systems?
Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.
What kind of circuit configurations can it be integrated into?
This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
