N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

RS Stock No.:: 541-1124P
Mfr. Part No.:: IRFBE30PBF
Brand:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

436 In stock - FREE next working day delivery available

Price Each (Supplied as a Tape)

£1.53

(exc. VAT)

£1.84

(inc. VAT)

Units	Per unit
10 - 49	£1.53
50 - 99	£1.46
100 - 249	£1.38
250 +	£1.31

RS Stock No.:: 541-1124P
Mfr. Part No.:: IRFBE30PBF
Brand:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4.7mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	10.41mm
Typical Gate Charge @ Vgs	78 nC @ 10 V
Height	9.01mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor