Vishay P-Channel MOSFET, 11 A, 200 V, 3-Pin TO-220AB IRF9640PBF
- RS Stock No.:
- 541-1118
- Distrelec Article No.:
- 171-16-478
- Mfr. Part No.:
- IRF9640PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
£1.88
(exc. VAT)
£2.26
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 74 unit(s) shipping from 20 October 2025
- Plus 45 unit(s) shipping from 20 October 2025
- Plus 1,000 unit(s) shipping from 06 March 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £1.88 |
| 10 - 49 | £1.58 |
| 50 - 99 | £1.51 |
| 100 - 249 | £1.41 |
| 250 + | £1.32 |
*price indicative
- RS Stock No.:
- 541-1118
- Distrelec Article No.:
- 171-16-478
- Mfr. Part No.:
- IRF9640PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 500 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 4.7mm | ||
Length 10.41mm | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 9.01mm | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements
Ease of paralleling
Simple drive requirements
MOSFET Transistors, Vishay Semiconductor