Infineon HEXFET N-Channel MOSFET, 42 A, 100 V, 3-Pin TO-247AC IRFP150NPBF
- RS Stock No.:
- 541-0856
- Distrelec Article No.:
- 303-41-346
- Mfr. Part No.:
- IRFP150NPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 1 - 9 | £1.69 |
| 10 - 49 | £1.60 |
| 50 - 99 | £1.57 |
| 100 - 249 | £1.47 |
| 250 + | £1.37 |
*price indicative
- RS Stock No.:
- 541-0856
- Distrelec Article No.:
- 303-41-346
- Mfr. Part No.:
- IRFP150NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 42 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 36 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 5.3mm | |
| Length | 15.9mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V | |
| Forward Diode Voltage | 1.3V | |
| Height | 20.3mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.3mm | ||
Length 15.9mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 110 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF
This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.
Features & Benefits
• Maximum continuous drain current of 42A
• Maximum drain-source voltage of 100V
• Low Rds(on) of 36mΩ for enhanced efficiency
• Maximum power dissipation of 160W
• Utilises enhancement mode for improved operation
• Integrated in a TO-247AC package for straightforward mounting
• Maximum drain-source voltage of 100V
• Low Rds(on) of 36mΩ for enhanced efficiency
• Maximum power dissipation of 160W
• Utilises enhancement mode for improved operation
• Integrated in a TO-247AC package for straightforward mounting
Applications
• Utilised in power supply circuits for automation devices
• Suitable for motor control in industrial machinery
• Employed in renewable energy systems for effective power conversion
• Applicable for high-frequency switching in telecommunications
• Suitable for motor control in industrial machinery
• Employed in renewable energy systems for effective power conversion
• Applicable for high-frequency switching in telecommunications
Can it be used in high-temperature environments?
Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.
What is the maximum gate-source voltage it can handle?
The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.
How does the low Rds(on) benefit performance?
A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.
Is it suitable for through-hole mounting?
Yes, the TO-247AC package is specifically intended for through-hole mounting applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
