Vishay N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-247AC IRFP450LCPBF
- RS Stock No.:
- 541-0187P
- Mfr. Part No.:
- IRFP450LCPBF
- Brand:
- Vishay
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Subtotal 10 units (supplied in a bag)*
£53.20
(exc. VAT)
£63.80
(inc. VAT)
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In Stock
- 106 unit(s) ready to ship
- Plus 999,999,893 unit(s) shipping from 14 May 2027
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Units | Per unit |
|---|---|
| 10 - 24 | £5.32 |
| 25 - 49 | £4.94 |
| 50 - 99 | £4.64 |
| 100 + | £4.02 |
*price indicative
- RS Stock No.:
- 541-0187P
- Mfr. Part No.:
- IRFP450LCPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 400 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 74 nC @ 10 V | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.31mm | |
| Transistor Material | Si | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 400 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 74 nC @ 10 V | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 5.31mm | ||
Transistor Material Si | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced power MOSFET technology the device improvement allow for reduced gate drive requirements, faster switching speed and increased total system savings. These device improvements combined with the proven ruggedness and reliability of power MOSFETs offer the designer a new standard in power transistors for switching applications.
Dynamic dV/dt rating
Repetitive avalanche rated
Ultra low gate charge
Repetitive avalanche rated
Ultra low gate charge
MOSFET Transistors, Vishay Semiconductor