Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin DPAK IRFR120NPBF

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
541-0092
Mfr. Part No.:
IRFR120NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Number of Elements per Chip

1

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.39mm