Infineon HEXFET N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-220AB IRL3705NPBF
- RS Stock No.:
- 540-9991P
- Mfr. Part No.:
- IRL3705NPBF
- Brand:
- Infineon
Subtotal 10 units (supplied in a tube)*
£12.50
(exc. VAT)
£15.00
(inc. VAT)
FREE delivery for orders over £50.00
- 980 unit(s) ready to ship
| Units | Per unit | 
|---|---|
| 10 - 49 | £1.25 | 
| 50 - 99 | £1.23 | 
| 100 - 249 | £1.15 | 
| 250 + | £1.07 | 
*price indicative
- RS Stock No.:
- 540-9991P
- Mfr. Part No.:
- IRL3705NPBF
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 89 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 170 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 98 nC @ 5 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 9.02mm | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 89 A | ||
| Maximum Drain Source Voltage 55 V | ||
| Series HEXFET | ||
| Package Type TO-220AB | ||
| Mounting Type Through Hole | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 10 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 2V | ||
| Minimum Gate Threshold Voltage 1V | ||
| Maximum Power Dissipation 170 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -16 V, +16 V | ||
| Width 4.83mm | ||
| Maximum Operating Temperature +175 °C | ||
| Length 10.67mm | ||
| Transistor Material Si | ||
| Number of Elements per Chip 1 | ||
| Typical Gate Charge @ Vgs 98 nC @ 5 V | ||
| Minimum Operating Temperature -55 °C | ||
| Forward Diode Voltage 1.3V | ||
| Height 9.02mm | ||
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF
Features & Benefits
• Operates in enhancement mode for innovative circuit designs
• Fast switching capabilities for improved system responsiveness
• Fully avalanche rated for durability in demanding situations
Applications
• Ideal for motor drive in automation
• Compatible with power supplies that require low thermal resistance
• Utilised in DC-DC converters for enhanced energy efficiency


