Infineon HEXFET N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-220AB IRL3705NPBF

RS Stock No.:: 540-9991P
Mfr. Part No.:: IRL3705NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-220AB IRL3705NPBF

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50 - 99	£1.23
100 - 249	£1.15
250 +	£1.07

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RS Stock No.:: 540-9991P
Mfr. Part No.:: IRL3705NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	89 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	10 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	170 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Width	4.83mm
	Maximum Operating Temperature	+175 °C
	Length	10.67mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	98 nC @ 5 V
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	9.02mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 89 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 10 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 170 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Width 4.83mm
	Maximum Operating Temperature +175 °C
	Length 10.67mm
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 98 nC @ 5 V
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 9.02mm

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF

This N-channel MOSFET is engineered for high-performance applications, while providing enhanced efficiency and reliability. Utilising advanced HEXFET technology, it boasts minimal on-resistance and is suitable for various automation, electronics, and electrical applications. The device operates across a wide temperature range, ensuring effective performance in diverse environments.

Features & Benefits

• Low Rds(on) of 10mΩ for increased efficiency
• Operates in enhancement mode for innovative circuit designs
• Fast switching capabilities for improved system responsiveness
• Fully avalanche rated for durability in demanding situations

Applications

• Suitable for industrial power management systems
• Ideal for motor drive in automation
• Compatible with power supplies that require low thermal resistance
• Utilised in DC-DC converters for enhanced energy efficiency

What is the maximum power dissipation capability?

The maximum power dissipation is rated at 170W, facilitating effective thermal management under high load conditions.

Is it suitable for high temperatures?

This device can function within a temperature range of -55°C to +175°C, making it suitable for a variety of high-temperature scenarios.

What is the significance of the gate threshold voltage range?

The gate threshold voltage ranges from 1V to 2V, which is essential for determining the on/off states across various gate drive voltages.

What considerations are there for using this in a circuit?

Ensure that the gate-to-source voltage does not exceed ±16V to prevent damage and maintain optimal functionality.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.