Infineon LogicFET N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF
- RS Stock No.:
- 540-9979P
- Mfr. Part No.:
- IRL3803PBF
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£12.50
(exc. VAT)
£15.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 10 - 49 | £1.25 |
| 50 - 99 | £1.17 |
| 100 - 249 | £1.09 |
| 250 + | £1.00 |
*price indicative
- RS Stock No.:
- 540-9979P
- Mfr. Part No.:
- IRL3803PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 140 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | LogicFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 140 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.02mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 140 A | ||
Maximum Drain Source Voltage 30 V | ||
Series LogicFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 140 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Length 10.67mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon LogicFET Series MOSFET, 140A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL3803PBF
This N-channel MOSFET is intended for high efficiency in power applications, with a low Rds(on) making it suitable for various electronic and mechanical systems. Through advanced processing techniques, it provides exceptional reliability in challenging environments, operating within a temperature range of -55°C to +175°C. The component is capable of supporting high power dissipation needs, making it an essential element in automation and industrial applications.
Features & Benefits
• Fast switching speed enhances overall system performance
• High continuous drain current of 140A accommodates various applications
• Low maximum drain-source resistance reduces power loss
• Dual gate-source voltage ratings offer design flexibility
• Fully avalanche rated to maintain performance under stress
• Efficient thermal management with TO-220AB package design
• High continuous drain current of 140A accommodates various applications
• Low maximum drain-source resistance reduces power loss
• Dual gate-source voltage ratings offer design flexibility
• Fully avalanche rated to maintain performance under stress
• Efficient thermal management with TO-220AB package design
Applications
• Used in power management circuits and motor control
• Suitable for industrial automation systems that require dependability
• Applied in switching power supplies for electronic devices
• Fit for renewable energy system
• Suitable for industrial automation systems that require dependability
• Applied in switching power supplies for electronic devices
• Fit for renewable energy system
What are the maximum ratings for continuous drain current?
The maximum continuous drain current is 140A at 25°C and decreases to 98A at 100°C under standard conditions.
How does the component handle thermal management?
It incorporates low thermal resistance, allowing for power dissipation up to 200W, with a linear derating factor of 1.3 W/°C.
What is the significance of its enhancement mode?
The enhancement mode permits operation without substantial gate voltage, enabling efficient control over the switching mechanism, which is essential for low-power applications.
What specific voltage ratings does it support?
It accommodates a gate-to-source voltage range of ±16V and a maximum drain-source breakdown voltage of 30V, enhancing versatility in circuit designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
