N-Channel MOSFET, 5.2 A, 55 V, 3 + Tab-Pin SOT-223 Infineon IRLL2705PBF
- RS Stock No.:
- 540-9907
- Mfr. Part No.:
- IRLL2705PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 540-9907
- Mfr. Part No.:
- IRLL2705PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.2 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Length | 6.7mm | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.7mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Height | 1.7mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.2 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Length 6.7mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 3.7mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Height 1.7mm | ||
Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF
This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.
Features & Benefits
• Maximum continuous drain current of 5.2A
• Drain-source voltage rating of 55V
• Low Rds(on) of 65mΩ for efficient operation
• Compact SOT-223 package for space-saving designs
Applications
• Ideal for power supply circuits
• Utilised in automotive power management systems
• Commonly employed for switching in high-frequency circuits
• Integrates well in power inverters for renewable energy systems
What is the maximum voltage this component can handle?
The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.
Can it operate at high temperatures?
Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.
How does this component manage heat during operation?
With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.
Is it compatible with standard PCB designs?
This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.
What makes this a suitable choice for automation projects?
Its Rapid switching capability and low on-resistance contribute to significant energy savings, enhancing the efficiency of automated systems.
