Infineon HEXFET P-Channel MOSFET, 74 A, 55 V, 3-Pin TO-220AB IRF4905PBF
- RS Stock No.:
- 540-9799P
- Mfr. Part No.:
- IRF4905PBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 10 - 24 | £1.40 |
| 25 - 49 | £1.34 |
| 50 - 99 | £1.25 |
| 100 + | £1.18 |
*price indicative
- RS Stock No.:
- 540-9799P
- Mfr. Part No.:
- IRF4905PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 74 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.69mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Height | 8.77mm | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 74 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.69mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Height 8.77mm | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 74A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF4905PBF
This MOSFET provides a versatile solution for power management across various industrial applications. It is designed for high efficiency and reliability, making it essential for professionals in the electronics and electrical sectors. With robust performance characteristics, this product enhances circuit design and ensures optimal operation in challenging environments.
Features & Benefits
• High continuous drain current capability of 74A supports demanding applications
• Maximum drain-source voltage of 55V enables effective power management
• Low on-resistance of 20mΩ improves energy efficiency
• Designed as an enhancement mode MOSFET for precise control
• Utilises a TO-220AB package for easy mounting and integration
• Maximum drain-source voltage of 55V enables effective power management
• Low on-resistance of 20mΩ improves energy efficiency
• Designed as an enhancement mode MOSFET for precise control
• Utilises a TO-220AB package for easy mounting and integration
Applications
• Used in DC-DC converters for efficient power conversion
• Ideal for motor control requiring substantial current management
• Employed in power supplies for streamlined operation
• Suitable for thermal management in high-load environments
• Used in automation systems for dependable switching
• Ideal for motor control requiring substantial current management
• Employed in power supplies for streamlined operation
• Suitable for thermal management in high-load environments
• Used in automation systems for dependable switching
How does the low on-resistance benefit circuit design?
The reduced on-resistance minimises power losses during operation, enhancing overall energy efficiency and performance, which is vital in high-current applications.
What is the significance of using a TO-220AB package?
The TO-220AB package allows for efficient heat dissipation while providing ease of installation, making it a preferred choice in industrial applications.
Can this component handle high-temperature environments?
Yes, it operates effectively at temperatures up to +175°C, suitable for rigorous applications.
What kind of applications require this MOSFET's high continuous drain current?
The high continuous drain current is suited for applications such as motor drives, power converters, and other systems that necessitate robust power handling.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
