Infineon HEXFET N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220AB IRFZ44NPBF
- RS Stock No.:
- 540-9777
- Distrelec Article No.:
- 303-41-384
- Mfr. Part No.:
- IRFZ44NPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 1 - 24 | £0.87 |
| 25 - 49 | £0.83 |
| 50 - 99 | £0.81 |
| 100 - 249 | £0.76 |
| 250 + | £0.71 |
*price indicative
- RS Stock No.:
- 540-9777
- Distrelec Article No.:
- 303-41-384
- Mfr. Part No.:
- IRFZ44NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 49 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 17.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 9.02mm | |
| Length | 10.67mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 49 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 17.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Transistor Material Si | ||
Width 9.02mm | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF
This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.
Features & Benefits
• Utilises enhancement mode for responsive control
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance
Applications
• Suitable for DC-DC converters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters
What impact does the low resistance have on performance?
The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.
How does temperature affect the continuous drain current?
Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.
Can this component handle repetitive avalanche conditions?
Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.
What type of applications benefit most from using this MOSFET?
This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
