STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220 STP4NK80Z
- RS Stock No.:
- 485-7692P
- Mfr. Part No.:
- STP4NK80Z
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£16.30
(exc. VAT)
£19.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5 unit(s) ready to ship
- Plus 50 unit(s) shipping from 28 January 2026
- Plus 999,999,940 unit(s) shipping from 03 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 20 | £1.63 |
| 25 - 95 | £1.542 |
| 100 - 495 | £1.198 |
| 500 + | £1.01 |
*price indicative
- RS Stock No.:
- 485-7692P
- Mfr. Part No.:
- STP4NK80Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 80 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 22.5 nC @ 10 V | |
| Width | 4.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.15mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 800 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 80 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 22.5 nC @ 10 V | ||
Width 4.6mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.15mm | ||
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