Infineon SIPMOS® P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1
- RS Stock No.:
- 462-3247P
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
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In Stock
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Units | Per unit |
|---|---|
| 100 - 240 | £0.428 |
| 250 - 490 | £0.411 |
| 500 - 990 | £0.392 |
| 1000 + | £0.365 |
*price indicative
- RS Stock No.:
- 462-3247P
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8.8 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Width | 6.22mm | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.3mm | |
| Forward Diode Voltage | 1.55V | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.8 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Width 6.22mm | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 2.3mm | ||
Forward Diode Voltage 1.55V | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
Infineon SIPMOS® Series MOSFET, 8.8A Maximum Continuous Drain Current, 42W Maximum Power Dissipation - SPD08P06PGBTMA1
This MOSFET is designed for applications requiring efficient switching and control. It can handle continuous drain currents of 8.8A and a drain-source voltage of 60V, suitable for various electronic circuits. The device operates effectively within a broad temperature range, enhancing performance in challenging environments.
Features & Benefits
• Enhanced mode operation ensures efficient switching performance
• High power capacity caters to strong electronic applications
• Low Rds(on) minimises energy losses during operation
• Utilises DPAK package for effective surface mount applications
• High power capacity caters to strong electronic applications
• Low Rds(on) minimises energy losses during operation
• Utilises DPAK package for effective surface mount applications
Applications
• Applicable in automotive electronic controls for high reliability
• Ideal for power management systems in industrial equipment
• Suitable for battery management systems in electric vehicles
• Utilised in inverter technology for renewable energy systems
• Used in electronic switching devices for consumer products
• Ideal for power management systems in industrial equipment
• Suitable for battery management systems in electric vehicles
• Utilised in inverter technology for renewable energy systems
• Used in electronic switching devices for consumer products
What are the implications of using a P-channel configuration?
P-channel configurations facilitate easy integration in high-side switch applications, providing convenient control within circuits.
How does the thermal performance affect longevity?
The capability to operate at up to +175°C enhances reliability and contributes to a longer lifespan in harsh environments.
What is the significance of the AEC-Q101 qualification?
This qualification confirms its suitability for automotive applications, meeting stringent reliability and safety standards.
Can this be used in conjunction with other MOSFETs?
Yes, it can be integrated with other components to create complementary circuits for efficient multi-switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
