Infineon SIPMOS N-Channel MOSFET, 100 mA, 250 V Depletion, 3-Pin SOT-23 BSS139H6327XTSA1
- RS Stock No.:
- 354-5770P
- Mfr. Part No.:
- BSS139H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 40 units (supplied on a continuous strip)*
£13.60
(exc. VAT)
£16.40
(inc. VAT)
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Units | Per unit |
|---|---|
| 40 - 79 | £0.34 |
| 80 - 159 | £0.33 |
| 160 - 319 | £0.32 |
| 320 + | £0.28 |
*price indicative
- RS Stock No.:
- 354-5770P
- Mfr. Part No.:
- BSS139H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 mA | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 2.3 nC @ 5 V | |
| Width | 1.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 mA | ||
Maximum Drain Source Voltage 250 V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 2.3 nC @ 5 V | ||
Width 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Non Compliant
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.