Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223
- RS Stock No.:
- 354-5708P
- Mfr. Part No.:
- BSP135H6327XTSA1
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 10 - 49 | £0.94 |
| 50 - 99 | £0.87 |
| 100 - 249 | £0.81 |
| 250 + | £0.75 |
*price indicative
- RS Stock No.:
- 354-5708P
- Mfr. Part No.:
- BSP135H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5 mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Distrelec Product Id | 302-83-876 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.5 mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Distrelec Product Id 302-83-876 | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 120 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP135H6327XTSA1
This MOSFET is intended for efficient switching applications, known for its high voltage handling capabilities and low power consumption profile. As a single N-channel depletion mode MOSFET, it is well-suited for various electronic applications that require compact surface mount solutions. With a maximum drain-source voltage of 600V, it is a suitable choice for automotive and power management sectors prioritising efficiency and reliability.
Features & Benefits
• Utilises SIPMOS® technology for enhanced efficiency
• Supports high voltage capacities up to 600V for operational reliability
• Low power consumption rated at 120mA improves energy efficiency
• Designed for surface mount applications, providing space-saving benefits
• ESD protection rated for 1A to safeguard sensitive circuits
• Automotive qualified under AEC-Q101, conforming to industry standards
Applications
• Suitable for power management solutions in electronic devices
• Utilised in low voltage with high voltage capabilities
• Integrated in packaging for efficient thermal management
• Used in control circuits that require robust components
What are the implications of the thermal resistance values for performance?
The thermal resistance indicates the device's heat dissipation effectiveness, ensuring it operates within safe limits during continuous use. Lower thermal resistance values can enhance performance by improving heat management, particularly in high-current applications.
Can this MOSFET handle high-frequency switching applications?
Yes, it features low gate charge characteristics, enabling efficient operation in high-frequency environments, making it suitable for a variety of modern electronic applications.
What should be considered regarding installation and compatibility?
It is important to confirm that the mounting type aligns with the circuit board design to optimise performance and avoid potential thermal management or connectivity issues.
How does the maximum power dissipation impact its application?
With a maximum power dissipation of 1.8W, it is essential to ensure that usage does not exceed this limit to prevent overheating and potential failure. Appropriate thermal management is crucial in design.
What are the limitations regarding gate-source voltage?
The gate-source voltage can range from -20V to +20V, which must be adhered to in order to maintain effective operation without damaging the device or compromising performance.
