Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1
- RS Stock No.:
- 354-5708P
- Mfr. Part No.:
- BSP135H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£9.40
(exc. VAT)
£11.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,911 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 49 | £0.94 |
| 50 - 99 | £0.87 |
| 100 - 249 | £0.81 |
| 250 + | £0.75 |
*price indicative
- RS Stock No.:
- 354-5708P
- Mfr. Part No.:
- BSP135H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Series | SIPMOS® | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.5mm | |
| Width | 3.5mm | |
| Typical Gate Charge @ Vgs | 3.7 nC @ 5 V | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.6mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 mA | ||
Maximum Drain Source Voltage 600 V | ||
Series SIPMOS® | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 6.5mm | ||
Width 3.5mm | ||
Typical Gate Charge @ Vgs 3.7 nC @ 5 V | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.6mm | ||
Forward Diode Voltage 1.2V | ||
Infineon SIPMOS® N-Channel MOSFETs
Infineon SIPMOS® Series MOSFET, 120 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP135H6327XTSA1
This MOSFET is intended for efficient switching applications, known for its high voltage handling capabilities and low power consumption profile. As a single N-channel depletion mode MOSFET, it is well-suited for various electronic applications that require compact surface mount solutions. With a maximum drain-source voltage of 600V, it is a suitable choice for automotive and power management sectors prioritising efficiency and reliability.
Features & Benefits
• Utilises SIPMOS® technology for enhanced efficiency
• Supports high voltage capacities up to 600V for operational reliability
• Low power consumption rated at 120mA improves energy efficiency
• Designed for surface mount applications, providing space-saving benefits
• ESD protection rated for 1A to safeguard sensitive circuits
• Automotive qualified under AEC-Q101, conforming to industry standards
• Supports high voltage capacities up to 600V for operational reliability
• Low power consumption rated at 120mA improves energy efficiency
• Designed for surface mount applications, providing space-saving benefits
• ESD protection rated for 1A to safeguard sensitive circuits
• Automotive qualified under AEC-Q101, conforming to industry standards
Applications
• Suitable for power management solutions in electronic devices
• Utilised in low voltage with high voltage capabilities
• Integrated in packaging for efficient thermal management
• Used in control circuits that require robust components
• Utilised in low voltage with high voltage capabilities
• Integrated in packaging for efficient thermal management
• Used in control circuits that require robust components
What are the implications of the thermal resistance values for performance?
The thermal resistance indicates the device's heat dissipation effectiveness, ensuring it operates within safe limits during continuous use. Lower thermal resistance values can enhance performance by improving heat management, particularly in high-current applications.
Can this MOSFET handle high-frequency switching applications?
Yes, it features low gate charge characteristics, enabling efficient operation in high-frequency environments, making it suitable for a variety of modern electronic applications.
What should be considered regarding installation and compatibility?
It is important to confirm that the mounting type aligns with the circuit board design to optimise performance and avoid potential thermal management or connectivity issues.
How does the maximum power dissipation impact its application?
With a maximum power dissipation of 1.8W, it is essential to ensure that usage does not exceed this limit to prevent overheating and potential failure. Appropriate thermal management is crucial in design.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
